Samsung has successfully produced the world’s first independent DRAM module using sub-10 nanometer manufacturing technology. The company aims for a significant increase in memory capacity with this new technology.

The DRAM industry has long relied on 10nm process technology for integrated circuit manufacturing. Samsung managed to overcome this limit and reach the single-digit nanometer level with its new generation production process called 10a.

New 4F Cell Structure and VCT Technology

Samsung applied 4F square cell structure and Vertical Channel Transistor (VCT) technology for the first time in the 10a production process. Thanks to these technical innovations, the production process is expected to scale between 9.5 and 9.7nm.

The 6F structure used in current DRAM products creates a rectangular block measuring 3Fx2F. Switching to the 4F structure provides a squarer structure with dimensions of 2Fx2F, increasing cell density by 30 percent to 50 percent.

This structural change not only provides denser capacity, but also contributes to energy savings. In this new technology, Samsung uses new materials such as Indium Gallium Zinc Oxide (IGZO) instead of silicon.

Using IGZO helps maintain data consistency by reducing leaks in shrinking cells. The company plans to complete the 10a DRAM development process this year and start mass production in 2028.

Next Generation DRAM Roadmap

Samsung will start using the 4F cell structure in the 10a generation and will further develop this technology in the 10b and 10c generations. With the 10d DRAM generation, it is aimed to transition to 3D DRAM technology between 2029-2030.

Other manufacturers in the industry follow different strategies. Competitors like Micron are choosing to focus directly on 3D DRAM technology, putting their 4F plans on hold.

Chinese manufacturers, on the other hand, face difficulties in producing 3D DRAM due to restrictions on access to advanced lithography equipment. However, the similarity of 3D DRAM design to 3D NAND structure is seen as a source of hope for these manufacturers.

In order to meet the increasing demand for artificial intelligence, 3D DRAM development efforts are accelerating around the world. This new technology from Samsung seems to change the course of competition in the memory market.

Do you think Samsung’s new 4F cell structure will initiate the expected big change in memory technologies?